ST2009DHI Datasheet | STMicroelectronics

ESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM RBE =35 Ω Typ. ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot V isol T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1500 600 7 10 20 7 55 2500 -65 to 150 150 Unit V V V A A A W V o o December 2002 1/6 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.3 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CES I EBO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Test Conditions V CE = 1500 V V CE = 1500 V V EB = 4 V IC = 5 A IC = 5 A IC = 1 A IC = 5 A I C = 5.5 A IF = 5 A IC = 5 A L BB(off ) = 2 µ H f = 32 KHz I Bon(END) = 1 A V BE(off) = -2.5 V I B = 1.25 A I B = 1.25 A V CE = 5 V V CE = 1 V V CE = 5 V 20 5 5 1.5 2.6 0.28 9 2 3.2 0.55 V µs µs TC = 125 o C 70 Min. Typ. Max. 1 2 210 1.5 1.2 Unit m A m A m A V V VF ts tf Diode Forward Voltage INDUCTIVE LOAD Storage Time Fall Time ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance 2/6 Derating Curve Output Characteristics Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain DC Current Gain 3/6 Power Losses Switching Time Inductive Load RBSOA Figure 1: Inductive Load Switching Test...