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ST93C06 - 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM

General Description

The ST93C06 and ST93C06C are 256 bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology.

In the text the two products are referred to as ST93C06.

The memory is divided into either 32 x 8 bit bytes or 16 x 16 bit words.

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Part Number Description Manufacturer

Other Datasheets by STMicroelectronics

Part Number Description
ST93C06C 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM
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ST93C46C (ST93C4xx) 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM
ST93C46T (ST93C4xx) 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM
ST93C47C (ST93C4xx) 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ST93C06 ST93C06C 256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE 5V ±10% SUPPLY VOLTAGE SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ENHANCED ESD/LATCH UP PERFORMANCES for ”C” VERSION ST93C06 and ST93C06C are replaced by the M93C06 DESCRIPTION The ST93C06 and ST93C06C are 256 bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. In the text the two products are referred to as ST93C06.