STAC4932F Overview
Description
The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz.
Key Features
- Excellent thermal stability
- Common source push-pull configuration
- POUT = 1000 W min. (1200 W typ.) with 26 dB gain at 123 MHz
- Pulse conditions: 1ms, 10%
- In compliance with the 2002/95/EC European directive
- ST air-cavity STAC packaging technology Efficiency 60 %
