Datasheet4U Logo Datasheet4U.com

STAC4932F - N-Channel MOSFET

General Description

The STAC4932F is a N-channel MOS field-effect RF power transistor.

It is intended for 100 V pulse applications up to 250 MHz.

This device is suitable for use in industrial, scientific and medical applications.

Key Features

  • Order code STAC4932F Frequency 123 MHz VDD 100 V POUT 1000 W Gain 26 dB.
  • Excellent thermal stability.
  • Common source push-pull configuration.
  • POUT = 1000 W min. (1200 W typ. ) with 26 dB gain at 123 MHz.
  • Pulse conditions: 1ms, 10%.
  • In compliance with the 2002/95/EC European directive.
  • ST air-cavity STAC packaging technology Efficiency 60 %.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STAC2932B RF power transistors HF/VHF/UHF N-channel MOSFETs ST Microelectronics
STAC2942B HF/VHF/UHF RF power N-channel MOSFET ST Microelectronics
STAC3932B RF power transistors HF/VHF/UHF N-channel MOSFETs ST Microelectronics
STAC9200 2-CHANNEL HIGH DEFINITION AUDIO CODEC IDT
STAC9200D 2-CHANNEL HIGH DEFINITION AUDIO CODEC IDT

Other Datasheets by STMicroelectronics

Part Number Description
STAC4932 N-Channel MOSFET
STAC4932B N-Channel MOSFET
STAC0912-250 LDMOS avionics radar transistor
STAC2932F RF power transistor
STAC2942F HF/VHF/UHF RF power N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STAC4932F Datasheet RF power transistors HF/VHF/UHF N-channel MOSFET 1 1 3 3 2 STAC780-4F Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Features Order code STAC4932F Frequency 123 MHz VDD 100 V POUT 1000 W Gain 26 dB • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. (1200 W typ.) with 26 dB gain at 123 MHz • Pulse conditions: 1ms, 10% • In compliance with the 2002/95/EC European directive • ST air-cavity STAC packaging technology Efficiency 60 % Description The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications.