Download STAP85025S Datasheet PDF
STAP85025S page 2
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STAP85025S page 3
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STAP85025S Key Features

  • Excellent thermal stability
  • mon source configuration
  • POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V
  • Plastic package
  • ESD protection
  • In pliance with the 2002/95/EC European directive Table 1. Device summary
  • 3 1.2 Thermal data
  • 4 2.2 Dynamic
  • 4 2.3 ESD protection characteristics

STAP85025S Description

The STAP85025S is a mon source Nchannel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at a frequency up to 1 GHz.