STAP85025 - Transistors

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ST Microelectronics

Datasheet Details

Part number	STAP85025
Manufacturer	STMicroelectronics
File Size	186.55 KB
Description	Transistors
Datasheet	STAP85025 Datasheet
Additional preview pages of the STAP85025 datasheet.

Product details

Description

STAP1 The STAP85025 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.It is designed for high gain, broadband commercial and industrial applications.It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.STAP85025 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP ST advanced PowerSO-10RF package.STAP85025’s superior linearity performance makes it an ideal solution for car mobile radio

Features

Excellent thermal stability Common source configuration POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC European directive.

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Published: Jul 7, 2009 |