STAP85025 Datasheet | STMicroelectronics

.. RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features - - - - - - Excellent thermal stability mon source configuration POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V Plastic package ESD protection In pliance with the 2002/95/EC European directive Description STAP1 The STAP85025 is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz. STAP85025 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS...