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STAP85025

Manufacturer: STMicroelectronics

STAP85025 datasheet by STMicroelectronics.

STAP85025 datasheet preview

STAP85025 Datasheet Details

Part number STAP85025
Datasheet STAP85025_STMicroelectronics.pdf
File Size 186.55 KB
Manufacturer STMicroelectronics
Description Transistors
STAP85025 page 2 STAP85025 page 3

STAP85025 Overview

STAP1 The STAP85025 is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz.

STAP85025 Key Features

  • Excellent thermal stability mon source configuration POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V Plastic package ES

STAP85025S from other manufacturers

View STAP85025S datasheet index

Brand Logo Part Number Description Other Manufacturers
STMicroelectronics Logo STAP85025S N-channel enhancement-mode lateral MOSFETs STMicroelectronics
STMicroelectronics logo - Manufacturer

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