STAP85025S Overview
Key Specifications
Description
The STAP85025S is a common source Nchannel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V
- Plastic package
- ESD protection
