STAP85025S Datasheet | STMicroelectronics

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs - production data STAP1 Figure 1. Pin connection Drain Description The STAP85025S is a mon source Nchannel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at a frequency up to 1 GHz. The STAP85025S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP® ST advanced PowerSO-10 RF package. The STAP85025S superior linearity performance makes it an ideal solution for the car mobile radio. The STAP® ST...