STAP85025S Datasheet N-channel enhancement-mode lateral MOSFETs

Manufacturer: STMicroelectronics

Datasheet Details

Part number	STAP85025S
Manufacturer	STMicroelectronics
File Size	122.27 KB
Description	N-channel enhancement-mode lateral MOSFETs
Download	STAP85025S Download (PDF)

The STAP85025S is a common source Nchannel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broadband commercial and industrial applications.

It operates at 13.6 V in common source mode at a frequency up to 1 GHz.

STAP85025S RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet - production data STAP1 Figure 1.

Excellent thermal stability.
Common source configuration.
POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V.
Plastic package.
ESD protection.
In compliance with the 2002/95/EC European directive Table 1. Device summary Order code Marking Package STAP85025S STAP85025S STAP1 Packing Tube December 2015 This is information on a product in full production. DocID15795 Rev 5 1/13 www. st. com Contents Contents STAP85025S 1 Electrical dat.

Brand Logo	Part Number	Description	Manufacturer
	STAP85025	Transistors	ST Microelectronics

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