STAP85025S Description
The STAP85025S is a mon source Nchannel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at a frequency up to 1 GHz.
STAP85025S Key Features
- Excellent thermal stability
- mon source configuration
- POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V
- Plastic package
- ESD protection
- In pliance with the 2002/95/EC European directive Table 1. Device summary
- 3 1.2 Thermal data
- 4 2.2 Dynamic
- 4 2.3 ESD protection characteristics