STB100N10F7 - N-channel Power MOSFET

STMicroelectronics

Datasheet Details

Part number	STB100N10F7
Manufacturer	STMicroelectronics
File Size	666.24 KB
Description	N-channel Power MOSFET
Datasheet	STB100N10F7 Datasheet

General Description

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Product status links STB100N10F7 STD100N10F7 STF100N10F7 STI100N10F7 STP100N10F7 DS9291 - Rev 6 - March 2022 For further information contact your local STMicroelectronics sales office.

www.st.com STB100N10F7,STD100N10F7,STF100N10F7,STI100N10F7,STP100N10F7 Electrical ratings 1 Electrical ratings Table 1.

Overview

STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mΩ typ.

Key Features

Order codes VDS RDS(on) max. ID STB100N10F7 80 A STD100N10F7 80 A STF100N10F7 100 V 8.0 mΩ 45 A STI100N10F7 80 A STP100N10F7 80 A.
Among the lowest RDS(on) on the market.
Excellent FoM (figure of merit).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness Package D2PAK DPAK TO-220FP I2PAK TO-220.

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