STB100N10F7 Datasheet
STB100N10F7 Datasheet (STMicroelectronics)
STMicroelectronics
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate char.
Order codes
VDS
RDS(on) max.
ID
STB100N10F7
80 A
STD100N10F7
80 A
STF100N10F7
100 V
8.0 mΩ
45 A
STI100N10F7
80 A
STP100N10F7
80 A
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness
Package D2.
STB100N10F7 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB100N10F7 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Min.
*With To-263(D2PAK) package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
.