STB100N10F7 Overview
Key Specifications
Package: TO-263-3
Mount Type: Surface Mount
Pins: 3
Height: 4.6 mm
Description
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status links STB100N10F7 STD100N10F7 STF100N10F7 STI100N10F7 STP100N10F7 DS9291 - Rev 6 - March 2022 For further information contact your local STMicroelectronics sales office.
Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness Package D2PAK DPAK TO-220FP I2PAK TO-220
