Datasheet Details
| Part number | STB100N10F7 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 666.24 KB |
| Description | N-channel Power MOSFET |
| Datasheet |
 STB100N10F7 Datasheet
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General Description
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Key Features
- Order codes VDS RDS(on) max. ID STB100N10F7 80 A STD100N10F7 80 A STF100N10F7 100 V 8.0 mΩ 45 A STI100N10F7 80 A STP100N10F7 80 A.
- Among the lowest RDS(on) on the market.
- Excellent FoM (figure of merit).
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness Package D2PAK DPAK TO-220FP I2PAK TO-220.