Description
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Features
- Order codes
VDS
RDS(on) max. ID
STB100N10F7
80 A
STD100N10F7
80 A
STF100N10F7
100 V
8.0 mΩ
45 A
STI100N10F7
80 A
STP100N10F7
80 A.
- Among the lowest RDS(on) on the market.
- Excellent FoM (figure of merit).
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness
Package D2PAK DPAK TO-220FP I2PAK TO-220.
STB100N10F7 Datasheet
