STB100N10F7 Overview
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. STB100N10F7,STD100N10F7,STF100N10F7,STI100N10F7,STP100N10F7 Electrical ratings 1 Electrical ratings Table 1. ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source...
STB100N10F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
