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STB11NB40-1 Datasheet N-CHANNEL PowerMESH MOSFET

Manufacturer: STMicroelectronics

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ ■ Figure 2.

Overview

www.DataSheet4U.com N-CHANNEL 400V - 0.48 Ω - 10.7A D2PAK/I2PAK PowerMESH™ MOSFET Table 1.

Key Features

  • Type STB11NB40 STB11NB40-1 VDSS 400 V 400 V RDS(on) < 0.55 Ω < 0.55 Ω ID 10.7 A 10.7 A STB11NB40 STB11NB40-1 Figure 1. Package.