STB11NB40 Datasheet | STMicroelectronics

.. - CHANNEL ENHANCEMENT MODE Power MESH™ MOSFET TYPE STB11NB40 s s s s s V DSS 400 V R DS(on) < 0.55 Ω ID 10.7 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH d V/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 12 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE 3 1 I2PAK TO-262 (suffix ”-1”) D2PAK TO-263 (suffix ”T4”) INTERNAL SCHEMATIC...