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STB11NB40-1 - N-CHANNEL PowerMESH MOSFET

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

Key Features

  • Type STB11NB40 STB11NB40-1 VDSS 400 V 400 V RDS(on) < 0.55 Ω < 0.55 Ω ID 10.7 A 10.7 A STB11NB40 STB11NB40-1 Figure 1. Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com N-CHANNEL 400V - 0.48 Ω - 10.7A D2PAK/I2PAK PowerMESH™ MOSFET Table 1. General Features Type STB11NB40 STB11NB40-1 VDSS 400 V 400 V RDS(on) < 0.55 Ω < 0.55 Ω ID 10.7 A 10.7 A STB11NB40 STB11NB40-1 Figure 1. Package FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.48 Ω ■ ■ ■ ■ EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED I2PAK TO-262 3 3 12 1 D2PAK TO-263 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.