STB11NB40 Datasheet - ST Microelectronics

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STB11NB40 General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

STB11NB40 Datasheet (247.87 KB)

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STB11NB40

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STMicroelectronics ↗

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N - channel enhancement mode powermesh mosfet.
www.DataSheet4U.com STB11NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STB11NB40 s s s s s V DSS 400 V R DS(on) < 0.55 Ω ID 10.7 A TYP.

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STB11NB40 General Description

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