STB120N10F4 mosfet equivalent, n-channel power mosfet.
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3 1
D 2PAK
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3 2 1
TO-220
Figure 1. Internal schematic diagram
' Ć7$%
*
Order codes
VDS
RDS(on) max. ID
STB120N10F4 STP120N10F4
100 V
10 mΩ
120 A
<.
* Switching applications
Description
These devices are N-channel Power MOSFETs developed using ST’s STripFET™ Deep.
These devices are N-channel Power MOSFETs developed using ST’s STripFET™ DeepGATE™ technology. The devices have a new gate structure and are specially designed to minimize on-state resistance to provide superior switching performance.
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