STB15NM60N Overview
This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. 4 2.1 (curves) ............................
STB15NM60N Key Features
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
- Switching
