STB18N55M5 Datasheet - STMicroelectronics

N-channel Power MOSFET

STB18N55M5 Features

* TAB ) 3 t(s 1 c D2PAK 3 2 1 TO-220FP Produ D(2, TAB) Order code VDS @ Tjmax. RDS(on)max. STB18N55M5 STF18N55M5 600 V 0.192 Ω

* Extremely low RDS(on)

* Low gate charge and input capacitance

* Excellent switching performance

* 100% avalanche tested Package D2

STB18N55M5 General Description

These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and su.

STB18N55M5 Datasheet (818.38 KB)