STB18N55M5 Overview
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application
STB18N55M5 Key Features
- Drain Current -ID=13A@ TC=25℃ -Drain Source Voltage
STB18N55M5 Applications
- Switching application
