STB18N55M5 Description
These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology bined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. DS12715 - Rev 1 - August 2018 For further information contact your local STMicroelectronics sales...
STB18N55M5 Key Features
- Extremely low RDS(on)
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested