STB18N55M5 Datasheet
STB18N55M5 Datasheet (STMicroelectronics)
STMicroelectronics
These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extreme.
TAB
) 3 t(s 1 c D2PAK
3 2 1
TO-220FP
Produ D(2, TAB)
Order code
VDS @ Tjmax.
RDS(on)max.
STB18N55M5 STF18N55M5
600 V
0.192 Ω
* Extremely low RDS(on)
* Low gate charge and input capacitance
* Excellent switching performance
* 100% avalanche tested
Package
D2PAK TO-220FP
lete Applications
.
STB18N55M5 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·100% avalanche tested ·Mini.
*Drain Current
*ID=13A@ TC=25℃
*Drain Source Voltage-
: VDSS= 550V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 240mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Switching application
ABSOLUTE MAXIMUM RATINGS(.