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STB200NF04L - N-CHANNEL STripFET II MOSFET

Description

This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process.

Features

  • TYPE STB200NF04L STP200NF04L STB200NF04L-1 s s s Figure 1: Package RDS(on) 3.5 mΩ 3.8 mΩ 3.8 mΩ ID 120 A 120 A 120 A 3 1 2 VDSS 40 V 40 V 40 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STP200NF04L STB200NF04L - STB200NF04L-1 N-CHANNEL 40V - 3 mΩ - 120 A TO-220/D²PAK/I²PAK STripFET™ II MOSFET Table 1: General Features TYPE STB200NF04L STP200NF04L STB200NF04L-1 s s s Figure 1: Package RDS(on) 3.5 mΩ 3.8 mΩ 3.8 mΩ ID 120 A 120 A 120 A 3 1 2 VDSS 40 V 40 V 40 V TYPICAL RDS(on) = 3mΩ 100% AVALANCHE TESTED LOW THERESHOLD DRIVE 3 1 TO-220 D²PAK DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and lesscritical alignement steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive applications.
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