STB21NM50N Description
The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the pany's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters I2PAK 3 2 1 TO-247 Figure.
STB21NM50N Key Features
- 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE