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STB21NM50N-1 - N-CHANNEL POWER MOSFET

Download the STB21NM50N-1 datasheet PDF. This datasheet also covers the STB21NM50N variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The STx21NM50N is realized with the second generation of MDmesh Technology.

This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Key Features

  • TYPE STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N.
  • Figure 1: Package RDS(on) < < < < < 0.19 0.19 0.19 0.19 0.19 Ω Ω Ω Ω Ω ID 18 A 18 A 18 A (.
  • ) 18 A 18 A VDSS (@Tjmax) 550 550 550 550 550 V V V V V 3 1 3 1 2 3 1 2 D2PAK TO-220 TO-220FP.
  • 100%.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STB21NM50N_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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STB21NM50N N-CHANNEL MOSFET STMicroelectronics
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STB21NM60ND N-channel MOSFET STMicroelectronics
STB21NM60ND N-Channel MOSFET INCHANGE

Other Datasheets by STMicroelectronics

Part Number Description
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STB200NF03 N-CHANNEL POWER MOSFET
STB200NF03-1 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1 N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET Table 1: General Features TYPE STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N ■ ■ Figure 1: Package RDS(on) < < < < < 0.19 0.19 0.19 0.19 0.19 Ω Ω Ω Ω Ω ID 18 A 18 A 18 A (*) 18 A 18 A VDSS (@Tjmax) 550 550 550 550 550 V V V V V 3 1 3 1 2 3 1 2 D2PAK TO-220 TO-220FP ■ 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 12 DESCRIPTION The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. www.DataSheet4U.