STB23NM60ND Key Features
- The worldwide best RDS(on)
- area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input
- Switching
- Part: STB23NM60ND
- Manufacturer: STMicroelectronics (official site)
- Size: 382.02 KB
Other STB23NM60ND Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
STB23NM60ND | N-Channel MOSFET |
STB23NM60ND Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly remended for bridge topologies, in particular ZVS phase-shift converters. 15 This is preliminary...