| Part Number | STB23NM60ND Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STB23NM60ND
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Min.
*With To-263(D2PAK) package *Low input capacitance and gate charge *Low gate input resistance *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE . |
STB23NM60ND Datasheet and Specifications PDF
The STB23NM60ND is a N-Channel MOSFET.
Key Specifications
| Package | D2PAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 4.6 mm |
| Length | 10.75 mm |
| Width | 10.4 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | STB23NM60ND Datasheet |
|---|---|
| Description | N-channel Power MOSFET |
| Manufacturer | STMicroelectronics |
| Overview | The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advan. Type VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.180 Ω < 0.180 Ω < 0.180 Ω < 0.180 Ω < 0.180 Ω ID 1 3 3 12 STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND 20 A 20 A 20 A(1) 20 A 20 A D²PAK 2 1 3 I²PAK TO-247 3 1 2 1 2 3 1. Limited by wire b. |