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23NM60N - STB23NM60N

General Description

This series of devices is designed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N 1. Limited only by maximum temperature allowed.
  • VDSS (@Tjmax) RDS(on) max ID 1 3 3 12 19 A 19 A 650 V 0.180 Ω 19 A (1) D²PAK 2 1 3 I²PAK 19 A 19 A 3 1 2 TO-247 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Figure 1. Internal schematic diagram.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET Features Type STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N 1. Limited only by maximum temperature allowed ■ ■ ■ VDSS (@Tjmax) RDS(on) max ID 1 3 3 12 19 A 19 A 650 V 0.180 Ω 19 A (1) D²PAK 2 1 3 I²PAK 19 A 19 A 3 1 2 TO-247 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Figure 1. Internal schematic diagram Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology.