23NM60N
23NM60N is STB23NM60N manufactured by STMicroelectronics.
Features
Type STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N
1. Limited only by maximum temperature allowed
- -
- VDSS (@Tjmax)
RDS(on) max
3 12
19 A 19 A 650 V 0.180 Ω 19 A (1)
D²PAK
2 1 3
I²PAK
19 A 19 A
3 1 2
TO-247
3 1 2
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
TO-220
TO-220FP
Figure 1.
Internal schematic diagram
Application
- Switching applications
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Table 1.
Device summary
Order codes Marking 23NM60N 23NM60N 23NM60N 23NM60N 23NM60N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube
STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N
March 2008
Rev 3
1/19
.st. 19
Free Datasheet http://../
Contents
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
Contents
1 2 Electrical ratings
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