23NM60ND Datasheet | STMicroelectronics

Features Order code VDS @ TJ max RDS(on) max. ID t(s) 3 c 2 1 du TO-247 lete Pro D(2, TAB) STW23NM60ND 650 V - Fast-recovery body diode - Low gate charge and input capacitance - Low on-resistance RDS(on) - 100% avalanche tested - High dv/dt ruggedness Applications - Switching applications 0.180 Ω 19.5 A bso G(1) t(s) - O S(3) AM01475v1_no Zen Description This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. Obsolete Produc Product status link STW23NM60ND Product summary Order code STW23NM60ND Marking Package TO-247 Packing Tube DS13218 - Rev 1 - January 2020 For further information contact your local STMicroelectronics sales office. .st. STW23NM60ND Electrical ratings Electrical ratings Table 1. Absolute maximum...