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23NM60ND - N-Channel MOSFET

General Description

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology.

Key Features

  • Order code VDS @ TJ max RDS(on) max. ID t(s) 3 c 2 1 du TO-247 lete Pro D(2, TAB) STW23NM60ND 650 V.
  • Fast-recovery body diode.
  • Low gate charge and input capacitance.
  • Low on-resistance RDS(on).
  • 100% avalanche tested.
  • High dv/dt ruggedness.

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STW23NM60ND Datasheet N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package Features Order code VDS @ TJ max RDS(on) max. ID t(s) 3 c 2 1 du TO-247 lete Pro D(2, TAB) STW23NM60ND 650 V • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness Applications • Switching applications 0.180 Ω 19.5 A bso G(1) t(s) - O S(3) AM01475v1_noZen Description This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.