Datasheet4U Logo Datasheet4U.com

23NM50N - N-channel Power MOSFET

Datasheet Summary

Description

These devices are made using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Order codes STB23NM50N STF23NM50N STP23NM50N STW23NM50N VDSS (@Tjmax) 550 V RDS(on) max. < 0.19 Ω ID 17 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

📥 Download Datasheet

Datasheet preview – 23NM50N

Datasheet Details

Part number 23NM50N
Manufacturer STMicroelectronics
File Size 422.67 KB
Description N-channel Power MOSFET
Datasheet download datasheet 23NM50N Datasheet
Additional preview pages of the 23NM50N datasheet.

📁 Similar Datasheet

  • 23N50 - N-Channel MOSFET (INCHANGE)
  • 23N50E - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 23N50E - N-CHANNEL POWER MOSFET (UTC)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STB23NM50N, STF23NM50N STP23NM50N, STW23NM50N N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK MDmesh™ II Power MOSFET Features Order codes STB23NM50N STF23NM50N STP23NM50N STW23NM50N VDSS (@Tjmax) 550 V RDS(on) max. < 0.19 Ω ID 17 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 3 1 D²PAK Figure 1.
Published: |