Datasheet4U Logo Datasheet4U.com

23N80K5 - N-channel Power MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code VDS RDS(on) max. ID STB23N80K5 800 V 0.28 Ω 16 A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected PTOT 190 W.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
23N50 N-Channel MOSFET INCHANGE
23N50E N-CHANNEL SILICON POWER MOSFET Fuji Electric
23N50E N-CHANNEL POWER MOSFET UTC

Other Datasheets by STMicroelectronics

Part Number Description
23NM50N N-channel Power MOSFET
23NM60N STB23NM60N
23NM60ND N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB23N80K5 Datasheet N-channel 800 V, 0.23 Ω typ., 16 A MDmesh K5 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) NG1D2TS3Z Features Order code VDS RDS(on) max. ID STB23N80K5 800 V 0.28 Ω 16 A • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected PTOT 190 W Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.