STB35N60DM2 Datasheet | STMicroelectronics

N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2 Power MOSFET in a D²PAK package - production data 3 1 D2PAK Figure 1: Internal schematic diagram Features Order code STB35N60DM2 600 V RDS(on) max. 0.110 Ω ID PTOT 28 A 210 W - Fast-recovery body diode - Extremely low gate charge and input capacitance - Low on-resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications - Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Order code STB35N60DM2 Table 1: Device summary Marking Package 35N60DM2 D²PAK Packing Tape and reel September 2015 Doc ID028331 Rev 1 This is information on a product in full...