STB3NB60 Datasheet - ST Microelectronics

N-CHANNEL Power MOSFET

STB3NB60 General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

STB3NB60 Datasheet (90.55 KB)

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STB3NB60

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STMicroelectronics ↗

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90.55 KB

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N-channel power mosfet.
® STB3NB60 N - CHANNEL 600V - 3.3Ω - 3.3A - D2PAK/I2PAK PowerMESH™ MOSFET TYPE STB3NB60 s s s s s V DSS 600 V R DS(on) <3.6 Ω ID 3.3 A TYPICAL R.

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STB3NB60 N-CHANNEL Power MOSFET ST Microelectronics

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STB3NB60 General Description

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