STB40NS15 mosfet equivalent, n-channel mosfet.
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Type
VDSS 150V
RDS(on) (max) <0.052Ω
ID 40A
STB40NS15
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Exceptional dv/dt capability Gate charge minimized Very low intrinsic ca.
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Switching application
Description
This Power MOSFET is designed using the company’s consolidated strip layout-ba.
This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
Figure 1.
Internal schematic diagram
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