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STB40N60M2 Datasheet N-channel MOSFET

Manufacturer: STMicroelectronics

Overview: STB40N60M2, STP40N60M2, STW40N60M2 N-channel 600 V, 0.078 Ω typ.

General Description

*  6  AM01476v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

These revolutionary Power MOSFETs associate a vertical structure to the pany's strip layout to yield one of the world's lowest on-resistance and gate charge.

They are therefore suitable for the most demanding high efficiency converters.

Key Features

  • Order codes VDS @ TJmax RDS(on) max ID STB40N60M2 STP40N60M2 650 V 0.088 Ω 34 A STW40N60M2.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected Figure 1. Internal schematic diagram ' 7$% .

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