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STB40N60M2 - N-CHANNEL MOSFET

General Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

Key Features

  • Order codes VDS @ TJmax RDS(on) max ID STB40N60M2 STP40N60M2 650 V 0.088 Ω 34 A STW40N60M2.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected Figure 1. Internal schematic diagram ' 7$% .

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB40N60M2, STP40N60M2, STW40N60M2 N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus™ low Qg 2 Power MOSFETs in D PAK, TO-220 and TO-247 packages Datasheet − production data TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 3 2 1 TO-247 Features Order codes VDS @ TJmax RDS(on) max ID STB40N60M2 STP40N60M2 650 V 0.088 Ω 34 A STW40N60M2 • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram ' 7$% Applications • Switching applications • LLC converters, resonant converters Description *  6  AM01476v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.