Datasheet Summary
STB40N60M2, STP40N60M2, STW40N60M2
N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus™ low Qg
Power MOSFETs in D PAK, TO-220 and TO-247 packages
- production data
2 3
D2PAK
3 2 1
TO-220
3 2 1
TO-247
Features
Order codes VDS @ TJmax RDS(on) max ID
STB40N60M2 STP40N60M2
650 V
0.088 Ω 34 A
STW40N60M2
- Extremely low gate charge
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
Figure 1. Internal schematic diagram
'7$%
Applications
- Switching applications
- LLC converters, resonant converters
Description
- 6
AM01476v1
These devices are N-channel Power MOSFETs developed using a...