STB43N60DM2 Datasheet - STMicroelectronics

N-CHANNEL POWER MOSFET

STB43N60DM2 Features

* Order code STB43N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.093 Ω ID 34 A PTOT 250 W

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Zener-pr

STB43N60DM2 General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STB43N60DM2 Datasheet (413.66 KB)

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Part number:

STB43N60DM2

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STMicroelectronics ↗

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413.66 KB

Description:

N-channel power mosfet.
STB43N60DM2 N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a D²PAK package Datasheet - production data TAB 3 1 D2PAK Figure 1: Inte.

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STB43N60DM2 N-CHANNEL POWER MOSFET STMicroelectronics

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STB43N60DM2 Features

STB43N60DM2 General Description

Datasheet Details

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