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STB43N65M5 Datasheet

N-channel Power MOSFET

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STB43N65M5
Datasheet
Automotive-grade N-channel 650 V, 0.058 Ω typ., 42 A MDmesh™ M5
Power MOSFET in a D²PAK package
TAB
2
3
1
D²PAK
D(2, TAB)
Features
Order code
STB43N65M5
VDS
650 V
RDS(on) max.
0.063 Ω
• AEC-Q101 qualified
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
ID
42 A
PTOT
250 W
Applications
G(1) • Switching applications
Description
S(3) AM01475v1_noZen This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative
vertical process technology combined with the well-known PowerMESH™ horizontal
layout. The resulting product offers extremely low on-resistance, making it particularly
suitable for applications requiring high power and superior efficiency.
Product status link
STB43N65M5
Product summary
Order code
STB43N65M5
Marking
43N65M5
Package
D²PAK
Packing
Tape and reel
DS11173 - Rev 2 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STB43N65M5 Datasheet

N-channel Power MOSFET

No Preview Available !

1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
VGS Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
ID
Drain current (continuous) at Tcase = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at Tcase = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg Storage temperature range
Tj Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. ISD ≤ 42 A, di/dt=150 A/μs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS.
3. VDS ≤ 520 V.
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb (1)
Thermal resistance junction-pcb
1. When mounted on a 1-inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
Parameter
IAR (1)
Avalanche current, repetitive or not repetitive
EAS (2)
Single pulse avalanche energy
1. (pulse width limited by Tjmax).
2. starting Tj = 25 °C, ID = IAR, VDD = 50 V.
STB43N65M5
Electrical ratings
Value
±25
42
26.5
168
250
15
50
-55 to 150
Unit
V
A
A
W
V/ns
°C
Value
0.5
30
Unit
°C/W
Value
7
650
Unit
A
mJ
DS11173 - Rev 2
page 2/16


Part Number STB43N65M5
Description N-channel Power MOSFET
Maker STMicroelectronics
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