Datasheet4U Logo Datasheet4U.com

STB50NE10 - N-Channel Power MOSFET

Description

strip-based process.

Features

  • Type VDSS RDS(on) ID STB50NE10 100V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STB50NE10L-T4 Power MOSFET VBsemi
STB50N25M5 N-Channel Power MOSFET STMicroelectronics
STB50NF25 N-Channel Power MOSFET STMicroelectronics
STB50NF25 N-Channel MOSFET VBsemi
STB5100 SCHOTTKY RECTIFIER SMC Diode

Other Datasheets by STMicroelectronics

Part Number Description
STB50NE10L N-Channel Power MOSFET
STB50NE08 N-Channel Power MOSFET
STB50NH02L N-CHANNEL POWER MOSFET
STB5105 Low-cost interactive set-top box decoder
STB55NE06 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STB50NE10 100V <0.027Ω 50A t(s) ■ Exceptional dv/dt capability ■ 100% avalanche tested uc ■ Low gate charge at 100 °C rod ■ Application oriented characterization te P ct(s) Description le du This Power MOSFET is the latest development of so ro STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor b P shows extremely high packing density for low on- O te resistance, rugged avalanche characteristics and ) le less critical alignment steps therefore a t(s o remarkable manufacturing reproducibility.
Published: |