STB50NE10 Datasheet | STMicroelectronics

N-channel 100V - 0.021Ω - 50A - D2PAK STripFET™ Power MOSFET General Features Type VDSS RDS(on) 100V <0.027Ω 50A t(s) - Exceptional dv/dt capability - 100% avalanche tested uc - Low gate charge at 100 °C rod - Application oriented characterization te P ct(s) Description le du This Power MOSFET is the latest development of so ro STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor b P shows extremely high packing density for low on- O te resistance, rugged avalanche characteristics and ) le less critical alignment steps therefore a t(s o remarkable manufacturing reproducibility. uc Obs Applications rod - - Switching...