STB50NE10L-T4 Datasheet | VBsemi

ATURES - Halogen-free According to IEC 61249-2-21 Definition - Surface Mount - Low-Profile Through-Hole - Available in Tape and Reel - Dynamic d V/dt Rating - 150 °C Operating Temperature - Fast Switching - Fully Avalanche Rated - pliant to Ro HS Directive 2002/95/EC D2PAK (TO-263) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc, e TC = 25 °C TA = 25 °C PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 m H, Rg = 25 , IAS = 18 A (see fig. 12). c. ISD 20 A, d I/dt  150 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may...