Download STB50NE10 Datasheet PDF
STMicroelectronics
STB50NE10
STB50NE10 is N-Channel Power MOSFET manufactured by STMicroelectronics.
ures Type VDSS RDS(on) 100V <0.027Ω 50A t(s) - Exceptional dv/dt capability - 100% avalanche tested uc - Low gate charge at 100 °C rod - Application oriented characterization te P ct(s) Description le du This Power MOSFET is the latest development of so ro STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor b P shows extremely high packing density for low on- O te resistance, rugged avalanche characteristics and ) le less critical alignment steps therefore a t(s o remarkable manufacturing reproducibility. uc Obs Applications rod - - Switching application 3 1 D2PAK Internal schematic diagram Obsolettee PProduct(s) Order codes ole Part number Obs STB50NE10T4 Marking B50NE10 Package D2PAK Packaging Tape & reel June 2006 Rev 5 1/13 .st. Contents Contents Electrical ratings - - - - - - - - . . . ....