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STB55NF06 - N-CHANNEL POWER MOSFET

Description

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Features

  • Order code STB55NF06 STP55NF06 STP55NF06FP VDSS RDS(on) max. ID 60 V < 0.018 Ω 50 A 50 A (1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value.
  • 100% avalanche tested.
  • Exceptional dv/dt capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB55NF06, STP55NF06, STP55NF06FP N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet — production data Features Order code STB55NF06 STP55NF06 STP55NF06FP VDSS RDS(on) max. ID 60 V < 0.018 Ω 50 A 50 A (1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value ■ 100% avalanche tested ■ Exceptional dv/dt capability Applications ■ Switching application Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.
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