Inchange Semiconductor STB55NF06
N-Channel MOSFET
| Part No. | STB55NF06 |
|---|---|
| Datasheet | STB55NF06 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●With To-263(D2PAK) package●Excellent switching performance
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●High current,high switch speed●Motor control,audio amplifiers
●DC-DC&DC-AC converters
●Automotive INCHANGE Semiconductor STB55NF06
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ （ TJ=175℃） TC=125℃ Drain Current-Single Pulsed ±20 50 35 200 PD Total Dissipation @TC=25℃ 110 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.36 62.5 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB55NF06
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise speci...