STB55NF06 Datasheet and Specifications PDF

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitab.

Order code STB55NF06 STP55NF06 STP55NF06FP VDSS RDS(on) max. ID 60 V < 0.018 Ω 50 A 50 A (1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value
* 100% avalanche tested
* Exceptional dv/dt capability Applications
* Switching application Description These Power M.

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-263(D2PAK) package ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable .

*With To-263(D2PAK) package
*Excellent switching performance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*High current,high switch speed
*Motor control,audio amplifiers
*DC-DC&DC-AC converters
*Automotive INCHANGE Semicond.