STB9NK80Z
Features
Order code STB9NK80Z
VDS 800 V
RDS(on) max. 1.8 Ω
ID 5.2 A
- AEC-Q101 qualified
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
- Zener-protected
Applications
- Switching applications
Description
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the Super MESH technology by STMicroelectronics, an optimization of the wellestablished Power MESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Product status link STB9NK80Z
Product summary
Order code
Marking
B9NK80Z
Package
D²PAK
Packing
Tape and reel
DS9606
- Rev 3
- October 2019 For further information contact your local STMicroelectronics sales office.
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Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC =...
