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STB9NK80Z - N-channel Power MOSFET

Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.

Features

  • Order code STB9NK80Z VDS 800 V RDS(on) max. 1.8 Ω ID 5.2 A.
  • AEC-Q101 qualified.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB9NK80Z Datasheet Automotive-grade N-channel 800 V, 1.5 Ω typ., 5.2 A SuperMESH Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code STB9NK80Z VDS 800 V RDS(on) max. 1.8 Ω ID 5.2 A • AEC-Q101 qualified • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
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