Datasheet Summary
Monolithic emitter switched bipolar transistor ESBT® 1700 V
- 4 A
- 0.17 Ω
Features
VCS(ON) IC RCS(ON)
0.7 V
4 A 0.17 Ω
- High voltage / high current cascode configuration
- Low equivalent ON resistance
- Very fast-switch: up to 150 kHz
- Squared RBSOA: up to 1700 V
- Very low CISS driven by RG = 47 Ω
- Very low turn-off cross over time
Application
- Aux SMPS for three-phase mains
Description
The STC04IE170HV is manufactured in monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications. It is designed for use in gate driven based topologies.
1 234
TO247-4L HV
Figure 1. Internal schematic diagrams
Table 1. Device...