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STC04IE170HV
Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.17 Ω
Features
VCS(ON) IC RCS(ON)
0.7 V
4 A 0.17 Ω
■ High voltage / high current cascode configuration
■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz ■ Squared RBSOA: up to 1700 V ■ Very low CISS driven by RG = 47 Ω ■ Very low turn-off cross over time
Application
■ Aux SMPS for three-phase mains
Description
The STC04IE170HV is manufactured in monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications. It is designed for use in gate driven based topologies.
1 234
TO247-4L HV
Figure 1. Internal schematic diagrams
Table 1.
STC04IE170HV Datasheet
