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STC04IE170HP - Emitter switched bipolar transistor

General Description

The STC04IE170HP is manufactured in Monolithic ESBT technology, aimed to provide the best performance in High Frequency / High voltage applications.

It is designed for use in Gate Driven based topologies.

Key Features

  • Table 1. VCS(ON) 0.7V.
  • General features IC 4A RCS(ON) 0.17Ω High voltage / high current cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHz Squared RBSOA, up to 1700 V Very low CISS driven by RG = 47 Ω Very low turn-off cross over time In compliance with the 2002/93/EC European Directive TO247-4L HP.
  • Internal schematic diagrams.

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STC04IE170HP Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 W General features Table 1. VCS(ON) 0.7V ■ General features IC 4A RCS(ON) 0.17Ω High voltage / high current cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHz Squared RBSOA, up to 1700 V Very low CISS driven by RG = 47 Ω Very low turn-off cross over time In compliance with the 2002/93/EC European Directive TO247-4L HP ■ ■ ■ ■ ■ ■ Internal schematic diagrams Applications ■ Aux SMPS for three phase mains Description The STC04IE170HP is manufactured in Monolithic ESBT technology, aimed to provide the best performance in High Frequency / High voltage applications. It is designed for use in Gate Driven based topologies.