STC04IE170HV Datasheet | STMicroelectronics

Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.17 Ω Features VCS(ON) IC RCS(ON) 0.7 V 4 A 0.17 Ω - High voltage / high current cascode configuration - Low equivalent ON resistance - Very fast-switch: up to 150 kHz - Squared RBSOA: up to 1700 V - Very low CISS driven by RG = 47 Ω - Very low turn-off cross over time Application - Aux SMPS for three-phase mains Description The STC04IE170HV is manufactured in monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications. It is designed for use in gate driven based topologies. 1 234 TO247-4L HV Figure 1. Internal schematic diagrams Table 1. Device...