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STC04IE170HV - Emitter Switched Bipolar Transistor

General Description

The STC04IE170HV is manufactured in monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications.

It is designed for use in gate driven based topologies.

Figure 1.

Key Features

  • VCS(ON) IC RCS(ON) 0.7 V 4 A 0.17 Ω.
  • High voltage / high current cascode configuration.
  • Low equivalent ON resistance.
  • Very fast-switch: up to 150 kHz.
  • Squared RBSOA: up to 1700 V.
  • Very low CISS driven by RG = 47 Ω.
  • Very low turn-off cross over time.

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STC04IE170HV Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.17 Ω Features VCS(ON) IC RCS(ON) 0.7 V 4 A 0.17 Ω ■ High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz ■ Squared RBSOA: up to 1700 V ■ Very low CISS driven by RG = 47 Ω ■ Very low turn-off cross over time Application ■ Aux SMPS for three-phase mains Description The STC04IE170HV is manufactured in monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications. It is designed for use in gate driven based topologies. 1 234 TO247-4L HV Figure 1. Internal schematic diagrams Table 1.