Datasheet4U Logo Datasheet4U.com

STC04IE170HV Datasheet Emitter Switched Bipolar Transistor

Manufacturer: STMicroelectronics

Overview: STC04IE170HV Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.

General Description

The STC04IE170HV is manufactured in monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications.

It is designed for use in gate driven based topologies.

1 234 TO247-4L HV Figure 1.

Key Features

  • VCS(ON) IC RCS(ON) 0.7 V 4 A 0.17 Ω.
  • High voltage / high current cascode configuration.
  • Low equivalent ON resistance.
  • Very fast-switch: up to 150 kHz.
  • Squared RBSOA: up to 1700 V.
  • Very low CISS driven by RG = 47 Ω.
  • Very low turn-off cross over time.

More Datasheets from STMicroelectronics

Part Number Description
STC04IE170HP Emitter switched bipolar transistor
STC03DE150 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR
STC03DE170 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR
STC03DE170HP Hybrid emitter switched bipolar transistor
STC03DE170HV HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT
STC03DE220HV Hybrid emitter switched bipolar transistor
STC05DE120HV Hybrid emitter switched bipolar transistor
STC05DE150 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR
STC05IE150HP Emitter Switched Bipolar Transistor
STC05IE150HV Emitter Switched Bipolar Transistor

STC04IE170HV Distributor