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STC08DE150 - HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR

Description

The STC08DE150 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed at providing the best performance in ESBT topology.

The STC08DE150 is designed for use in aux flyback smps for any three phase application.

Features

  • VCS(ON) 0.6 V n n n n Figure 1: Package RCS(ON) 0.075 W IC 8A LOW.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com STC08DE150 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT™ 1500 V - 8 A - 0.075 W PRELIMINARY DATA Table 1: General Features VCS(ON) 0.6 V n n n n Figure 1: Package RCS(ON) 0.075 W IC 8A LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1500 V VERY LOW CISS DRIVEN BY RG = 47 W 2 3 4 APPLICATION n SINGLE SWITCH SMPS BASED ON THREE PHASE MAINS DESCRIPTION The STC08DE150 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed at providing the best performance in ESBT topology. The STC08DE150 is designed for use in aux flyback smps for any three phase application.
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