STC08IE120HV Datasheet | STMicroelectronics

.. Emitter Switched Bipolar Transistor ESBT® 1200 V - 8 A - 0.10 Ω General Features VCS(ON) 0.8 V - IC 8A RCS(ON) 0.10 W High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time - - - - - 1 TO247-4L HV Applications - - Internal schematic diagrams Flyback / forward SMPS Sepic PFC Description The STC08IE120HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. Order...