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STC08IE120HV Datasheet Emitter Switched Bipolar Transistor

Manufacturer: STMicroelectronics

Overview: www.DataSheet4U.com STC08IE120HV Emitter Switched Bipolar Transistor ESBT® 1200 V - 8 A - 0.

General Description

The STC08IE120HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.

It is designed for use in Gate Driven based topologies.

Order codes Part Number STC08IE120HV Marking C08IE120HV Package TO247-4L HV Packaging Tube January 2007 Rev 3 1/11 www.st.com 11 STC08IE120HV Contents 1 2 Electrical ratings .

Key Features

  • VCS(ON) 0.8 V.
  • IC 8A RCS(ON) 0.10 W High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time.
  • 1 23 4 TO247-4L HV.

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STC08IE120HV Distributor