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STC08IE150HV
Emitter Switched Bipolar Transistor ESBT® 1500 V - 8 A - 0.10 Ω
Features
VCS(ON) 0.8 V
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PRELIMINARY DATA
IC 8A
RCS(ON) 0.10 W
High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Ω Very low turn-off cross over time In compliance with the 2002/93/EC European Directive
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1
23
4
TO247-4LHV
Applications
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Aux SMPS for three phase mains Sepic PFC
Internal Schematic Diagram
Description
The STC08IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies.
STC08IE150HV Datasheet
