STD100NH03L Datasheet | STMicroelectronics

DESCRIPTION The STD100NH03L utilizes the latest advanced design rules of ST’s proprietary STrip FET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES Ordering Information SALES TYPE STD100NH03LT4 MARKING D100NH03L PACKAGE TO-252 PACKAGING TAPE & REEL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(2) ID(2) IDM(3) Ptot EAS (4) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 20 60 60 240 100 0.66 700 -55 to 175 Unit V V V A A A W W/°C m J °C 1/11 September 2003 THERMAL DATA Rthj-case Rthj-amb Rthj-pcb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Junction-pcb(#) Maximum Lead Temperature For Soldering Purpose Max Max Max 1.5 100 43 275 °C/W °C/W °C/W °C (#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu. ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 20V Min. 30 1 10 ±100 Typ. Max. Unit V µA µA n A ON (- ) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 5 V ID = 250 µA ID = 30 A ID = 30 A Min. 1 Typ. 1.8 0.005 0.0060 Max. 2.5 0.0055 0.0105 Unit V Ω Ω DYNAMIC Symbol gfs (5) Ciss Coss Crss RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer...