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STD100NH02L Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: N-CHANNEL 24V - 0.0042 Ω - 60A DPAK/IPAK STripFET™ III POWER MOSFET TYPE STD100NH02L s s s s s s s STD100NH02L VDSS 24 V RDS(on) < 0.0048 Ω ID 60 A(2) s TYPICAL RDS(on) = 0.0042 Ω @ 10 V TYPICAL RDS(on) = 0.

General Description

The STD100NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology.

This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.

INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES ABSOLUTE MAXIMUM RATINGS Symbol Vspike(1) VDS VDGR VGS ID(2) ID(2) IDM(3) Ptot EAS (4) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max.

STD100NH02L Distributor