STD134N4F7AG Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STD134N4F7AG AM01475v1_Tab Table 1: Device summary Marking Package 134N4F7 DPAK Packing Tape and reel December 2016 DocID030109 Rev 1 This is information on a...
STD134N4F7AG Key Features
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness